NCE85H15T mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =85V,ID =150A RDS(ON) <4.8mΩ @ VGS=10V (Typ:3.9mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
General Features
* VDS =85V,ID =150A RDS(ON) <4.8mΩ @ VGS=10V (Typ:3.9mΩ)
* High density cell design for ultra.
The NCE85H15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
General Features
* VDS =85V,ID =150A RDS(ON) <4..
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