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NCE Power

NCE85H15T Datasheet Preview

NCE85H15T Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE85H15T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H15T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. This
device is suitable for use in PWM, load switching and general
purpose applications.
General Features
VDS =85V,ID =150A
RDS(ON) <4.8m@ VGS=10V (Typ:3.9m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Special designed for Convertors and power controls
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE85H15T
NCE85H15T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
ID (100)
IDM
PD
dv/dt
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Limit
85
±20
150
106
600
270
15
1.8
1100
Unit
V
V
A
A
A
W
V/ns
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0




NCE Power

NCE85H15T Datasheet Preview

NCE85H15T Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Operating Junction and Storage Temperature Range
TJ,TSTG
Pb Free Product
NCE85H15T
-55 To 175
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.56 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=85V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=40A
VDS=25V,ID=40A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V,ID=2A,RL=15
,RG=2.5,VGS=10V
VDS=30V,ID=30A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=40A
IS
trr Tj=25,IF=75A
di/dt=100A/μs(Note3)
Qrr
Min Typ
85 89
--
--
2 2.85
- 3.9
110 -
- 8800
- 680
- 520
- 22.5
- 15
- 70
- 18.75
- 200
- 40
- 60
--
--
-
-
Max
-
1
±100
4
4.8
-
-
-
-
-
-
-
-
-
-
-
1.2
150
45
70
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=42.5V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCE85H15T
Description NCE N-Channel Enhancement Mode Power MOSFET
Maker NCE Power
Total Page 7 Pages
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