NCE85H21T
Description
The NCE85H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications.
Key Features
- VDSS =85V,ID =210A RDS(ON) < 4.5mΩ @ VGS=10V Schematic diagram
- Good stability and uniformity with high EAS
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
