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NCE Power

NCE85H21T Datasheet Preview

NCE85H21T Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE85H21T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H21T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in automotive applications and a wide variety of other
applications.
General Features
VDSS =85V,ID =210A
RDS(ON) < 4.5m@ VGS=10V
Schematic diagram
Good stability and uniformity with high EAS
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE85H21T
NCE85H21T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100)
IDM
PD
Single pulse avalanche energy (Note 3)
EAS
Peak Diode Recovery dv/dt (Note 4)
dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
85
±20
210
150
850
330
2.2
2200
5
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
V/ns
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0




NCE Power

NCE85H21T Datasheet Preview

NCE85H21T Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE85H21T
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 1)
RθJC
0.45 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
85 -
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=85V,VGS=0V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±200 nA
On Characteristics
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
23
4
V
25
Drain-Source On-State Resistance
125
RDS(ON)
VGS=10V, ID=40A
- 3.2 4.5
- 5 6.8
m
m
Forward Transconductance
gFS
VDS=25V,ID=40A
100 165
-
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 11000
- 914
-
-
PF
PF
Crss
- 695
-
PF
Switching Characteristics
Turn-on Delay Time
td(on)
- 23
-
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
- 190
- 130
- 120
-
-
-
nS
nS
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 250
Qgs ID=30A,VDD=30V,VGS=10V -
48
Qgd - 98
-
-
-
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
VSD
VGS=0V,IS=40A
- - 1.2
V
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = 40A
- 63
-
nS
Qrr
di/dt = 100A/μs(Note2)
- 98
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Surface Mounted on FR4 Board, t 10 sec.
2. Pulse Test: Pulse Width 400μs, Duty Cycle 2%.
3. EAS conditionTj=25,VDD=42.5V,VG=10V,L=2mH,Rg=25,IAS=37A
4. ISD125A, di/dt260A/μs, VDDV(BR)DSSTJ 175°C
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCE85H21T
Description NCE N-Channel Enhancement Mode Power MOSFET
Maker NCE Power
Total Page 7 Pages
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