NCE0110AK
Description
The NCE0110AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Key Features
- VDS =100V,ID =10A RDS(ON) < 130mΩ @ VGS=10V (Typ:95mΩ) RDS(ON) < 140mΩ @ VGS=4.5V (Typ:100mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability Schematic diagram
