NCE0110K Datasheet, Mosfet, NCE Power Semiconductor

NCE0110K Features

• Mosfet
• VDS =100V,ID =9.6A RDS(ON) < 140mΩ @ VGS=10V (Typ:108mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current <

PDF File Details

Part number:

NCE0110K

Manufacturer:

NCE Power Semiconductor

File Size:

440.19kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE0110K Application

• Applications General Features
• VDS =100V,ID =9.6A RDS(ON) < 140mΩ @ VGS=10V (Typ:108mΩ)
• High density cell design for ultra lo

TAGS

NCE0110K

NCE Power Semiconductor

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