NCE0110AK - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Datasheet Details

Part number	NCE0110AK
Manufacturer	NCE Power Semiconductor
File Size	442.63 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0110AK-NCEPowerSemiconductor.pdf

The NCE0110AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =100V,ID =10A RDS(ON) < 130mΩ @ VGS=10V (Typ:95mΩ) RDS(ON) < 140mΩ @ VGS=4.5V (Typ:100mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram.

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Published: May 15, 2016 |