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NCE0110AS - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE0110AS
Manufacturer	NCE Power Semiconductor
File Size	437.55 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0110AS-NCEPowerSemiconductor.pdf

NCE0110AS Product details

Description

The NCE0110AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID =10A RDS(ON) < 17mΩ @ VGS=10V (Typ:14mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current Schematic diagram.

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Published: Feb 7, 2016 |