NCE0117 Datasheet, Mosfet, NCE Power Semiconductor

NCE0117 Features

• Mosfet
• VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ)
• High density cell design for ultra low Rdson
• Fully characterized Avalanche voltage and current
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Part number:

NCE0117

Manufacturer:

NCE Power Semiconductor

File Size:

381.20kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide va

NCE0117 Application

• Applications GENERAL FEATURES
• VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ)
• High density cell design for ultra low Rds

TAGS

NCE0117

NCE Power Semiconductor

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