NCE0110K mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =100V,ID =9.6A
RDS(ON) < 140mΩ @ VGS=10V (Typ:108mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and curren.
General Features
* VDS =100V,ID =9.6A
RDS(ON) < 140mΩ @ VGS=10V (Typ:108mΩ)
* High density cell design for u.
The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =100V,ID =9.6A
RDS(ON) < 140mΩ @ VGS=10V (Typ:108mΩ)
* High.
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