n-channel enhancement mode power mosfet.
* VDS =200V,ID =8A RDS(ON) <300mΩ @ VGS=10V（Typ：260mΩ）
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
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General Features
* VDS =200V,ID =8A RDS(ON) <300mΩ @ VGS=10V（Typ：260mΩ）
* High density cell design for ultra l.
The NCE0208KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =200V,ID =8A RDS(ON) <300mΩ @ VGS=10V（Typ：260mΩ）
* High dens.
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