• Part: NCE0208KA
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 390.02 KB
Download NCE0208KA Datasheet PDF
NCE Power Semiconductor
NCE0208KA
Description The NCE0208KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =200V,ID =8A RDS(ON) <300mΩ @ VGS=10V(Typ:260mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Low gate to drain charge to reduce switching losses Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Schematic diagram Marking and pin assignment 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking NCE0208KA Device NCE0208KA Device Package TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain...