NCE15GD120T Datasheet | NCE Power Semiconductor

Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=15A z High input impedance Applications z Inductive heating, Microwave oven, Inverter, UPS, etc. z Soft switching applications General Description Using advanced Trench NPT technology, NCE’s 1200V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Absolute Maximum Ratings Pb Free Product Symbol Description VCES VGES ICM(1) IF IFM TJ Tstg Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current @TC=25°C Continuous Collector Current @TC=100°C Pulsed Collector Current Diode Continuous Forward Current @TC=100°C Diode Maximum Forward Current Maximum Power Dissipation @TC=25°C Maximum Power Dissipation @TC=100°C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from TL case for 5seconds Notes: 1. Repetitive rating, Pulse width limited by max. junction temperature Ratings 1200 +/-30 30 15 45 15 90 220 88 -55 to +150 -55 to +150 Units V V A A A A W W °C °C °C Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://.ncepower. Thermal Characteristics Symbol R JC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Electrical Characteristics of the IGBT TC=25°C Symbol Parameter Off Characteristics BVCES Collector to Emitter Breakdown Voltage ICES Collector Cut-Off Current IGES G-E Leakage Current On Characteristics VGE(th) G-E Threshold...