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NCE15H15T - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE15H15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in Automotive applications and a wide variety of other applications.

Features

  • VDSS =150V,ID =150A RDS(ON) < 8mΩ @ VGS=10V （Typ：6.6 mΩ）.
  • Good stability and uniformity with high EAS.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet preview – NCE15H15T

Datasheet Details

Part number NCE15H15T
Manufacturer NCE Power Semiconductor
File Size 338.58 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE15H15T Datasheet
Additional preview pages of the NCE15H15T datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE15H15T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features ● VDSS =150V,ID =150A RDS(ON) < 8mΩ @ VGS=10V （Typ：6.
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