NCE40H29D mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =40V ,ID =290A RDS(ON) < 2.4mΩ @ VGS=10V
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and .
General Features
* VDS =40V ,ID =290A RDS(ON) < 2.4mΩ @ VGS=10V
Schematic diagram
* High density cell design.
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