NCE40H21 datasheet, mosfet equivalent, NCE Power Semiconductor

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NCE40H21 Features and benefits

* VDS =40V ,ID =210A RDS(ON) < 4mΩ @ VGS=10V Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and cu.

NCE40H21 Application

General Features
* VDS =40V ,ID =210A RDS(ON) < 4mΩ @ VGS=10V Schematic diagram
* High density cell design f.

NCE40H21 Description

The NCE40H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =40V ,ID =210A RDS(ON) < 4mΩ @ VGS=10V Schematic diagram
* .

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