NCE40H12 Datasheet, mosfet equivalent, NCE Power Semiconductor

NCE40H12 Features

• Mosfet
• VDS =40V,ID =120A RDS(ON) <4 mΩ @ VGS=10V RDS(ON) <7 mΩ @ VGS=4.5V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and c

PDF File Details

Part number:

NCE40H12

Manufacturer:

NCE Power Semiconductor

File Size:

364.13kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE40H12 Application

• Applications General Features
• VDS =40V,ID =120A RDS(ON) <4 mΩ @ VGS=10V RDS(ON) <7 mΩ @ VGS=4.5V
• High density cell design for

TAGS

NCE40H12

NCE Power Semiconductor

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