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NCE40H19 - NCE N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE40H19
Manufacturer	NCE Power Semiconductor
File Size	448.86 KB
Description	NCE N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE40H19-NCEPowerSemiconductor.pdf

NCE40H19 Product details

Description

The NCE40H19 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =40V,ID =190A RDS(ON) < 3.5mΩ @ VGS=10V Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: May 22, 2015 |