NCE40H19 - NCE N-Channel Enhancement Mode Power MOSFET
NCE40H19 Features
* VDS =40V,ID =190A RDS(ON) < 3.5mΩ @ VGS=10V Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process t
