NCE40H12I Datasheet, Mosfet, NCE Power Semiconductor

NCE40H12I Features

• Mosfet
• VDS =40V,ID =120A RDS(ON) <4mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and cur

PDF File Details

Part number:

NCE40H12I

Manufacturer:

NCE Power Semiconductor

File Size:

356.81kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE40H12I Application

• Applications General Features
• VDS =40V,ID =120A RDS(ON) <4mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V
• High density cell design for ul

TAGS

NCE40H12I

NCE Power Semiconductor

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