NCE40H20 - N-Channel Enhancement Mode Power MOSFET
NCE40H20 Features
* VDS = 40V,ID =200A RDS(ON) < 4mΩ @ VGS=10V (Typ:3.3mΩ) Schematic diagram
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
