NCE40H29D - N-Channel Enhancement Mode Power MOSFET
NCE40H29D Features
* VDS =40V ,ID =290A RDS(ON) < 2.4mΩ @ VGS=10V Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process
