NCE40H21C Datasheet, Mosfet, NCE Power Semiconductor

NCE40H21C Features

• Mosfet
• VDS =40V ,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V Schematic diagram
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and cur

PDF File Details

Part number:

NCE40H21C

Manufacturer:

NCE Power Semiconductor

File Size:

440.46kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE40H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE40H21C Application

• Applications General Features
• VDS =40V ,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V Schematic diagram
• High density cell design for ul

TAGS

NCE40H21C

NCE Power Semiconductor

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