NCE4435 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -30V,ID = -9.1A
S Schematic diagram
RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V
* High power and current handing capability
* Lead free pro.
The NCE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
D G
General Features
* VDS = -30V,ID = -9.1A
S Schematic diagram
RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 2.
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