n-channel enhancement mode power mosfet.
General Feature
* VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V
(Typ:5.7mΩ)
* Special process technology for h.
The NCE60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Feature
* VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V
(Typ:5.7mΩ)
* Speci.
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