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NCE60H12 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE60H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 60V,ID =115A RDS(ON) < 7.0mΩ @ VGS=10V (Typ6.5mΩ) Schematic diagram.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

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Datasheet Details

Part number NCE60H12
Manufacturer NCE Power Semiconductor
File Size 378.03 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE60H12 Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE60H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =115A RDS(ON) < 7.0mΩ @ VGS=10V (Typ6.
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