NCE60H12 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 60V,ID =115A RDS(ON) < 7.0mΩ @ VGS=10V
(Typ6.5mΩ)
Schematic diagram
* Special process technology for high ESD capability
* High density cell design.
General Features
* VDS = 60V,ID =115A RDS(ON) < 7.0mΩ @ VGS=10V
(Typ6.5mΩ)
Schematic diagram
* Special proc.
The NCE60H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 60V,ID =115A RDS(ON) < 7.0mΩ @ VGS=10V
(Typ6.5mΩ)
Schematic d.
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