NCE80H12D mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =80V,ID =120A RDS(ON) <6mΩ @ VGS=10V
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and curr.
General Features
* VDS =80V,ID =120A RDS(ON) <6mΩ @ VGS=10V
Schematic diagram
* High density cell design for.
The NCE80H12D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =80V,ID =120A RDS(ON) <6mΩ @ VGS=10V
Schematic diagram
* H.
Image gallery
TAGS
Download (Size : 335.40KB)