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NCEP0140AL - N-Channel Super Trench Power MOSFET

Description

The NCEP0140AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =100V,ID =45A RDS(ON)=18mΩ (typical) @ VGS=10V RDS(ON)=22mΩ (typical) @ VGS=4.5V Schematic Diagram.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested Marking and pin assignment.

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Datasheet preview – NCEP0140AL

Datasheet Details

Part number NCEP0140AL
Manufacturer NCE Power Semiconductor
File Size 375.87 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP0140AL Datasheet
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http://www.ncepower.com Pb Free Product NCEP0140AL NCE N-Channel Super Trench Power MOSFET Description The NCEP0140AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =45A RDS(ON)=18mΩ (typical) @ VGS=10V RDS(ON)=22mΩ (typical) @ VGS=4.
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