NCEP10N12 Datasheet, MOSFET, NCE Power Semiconductor

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NCEP10N12 Features and benefits

* VDS =120V,ID =70A RDS(ON)=8.5mΩ , typical (TO-220)@ VGS=10V RDS(ON)=8.2mΩ , typical (TO-263)@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very .

NCEP10N12 Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(O.

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