NCEP10N12 - N-Channel Super Trench II Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCEP10N12
Manufacturer	NCE Power Semiconductor
File Size	413.19 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	NCEP10N12-NCEPowerSemiconductor.pdf

NCEP10N12 Product details

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =120V,ID =70A RDS(ON)=8.5mΩ , typical (TO-220)@ VGS=10V RDS(ON)=8.2mΩ , typical (TO-263)@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP10N12 NCEP10N12 TO-220 NCEP10N12D NCEP10N12D TO-263 Reel Size - Tape width -.

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Published: Feb 13, 2025 |