Datasheet Details
| Part number | NCEP10N12 |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 413.19 KB |
| Description | N-Channel Super Trench II Power MOSFET |
| Datasheet |
 NCEP10N12 Datasheet
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Description
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
Features
- VDS =120V,ID =70A RDS(ON)=8.5mΩ , typical (TO-220)@ VGS=10V RDS(ON)=8.2mΩ , typical (TO-263)@ VGS=10V.
- Excellent gate charge x RDS(on) product(FOM).
- Very low on-resistance RDS(on).
- 175 °C operating temperature.
- Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP10N12 NCEP10N12 TO-220 NCEP10N12D NCEP10N12D TO-263 Reel Size - Tape width -.