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NCEP30T17G Datasheet

Manufacturer: NCE Power Semiconductor
NCEP30T17G datasheet preview

NCEP30T17G Details

Part number NCEP30T17G
Datasheet NCEP30T17G-NCEPowerSemiconductor.pdf
File Size 369.90 KB
Manufacturer NCE Power Semiconductor
Description N-Channel Power MOSFET
NCEP30T17G page 2 NCEP30T17G page 3

NCEP30T17G Overview

The NCEP30T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP30T17G Key Features

  • VDS =30V,ID =170A RDS(ON)=1.35mΩ (typical) @ VGS=10V RDS(ON)=1.8mΩ (typical) @ VGS=4.5V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous

NCEP30T17G Distributor

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