NCEP30T17G Datasheet, NCE Power Semiconductor

* VDS =30V,ID =170A RDS(ON)=1.35mΩ (typical) @ VGS=10V RDS(ON)=1.8mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD
* Excellent gate charge x RDS(on) produc.

The NCEP30T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg..