NCEP3085EG Datasheet - NCE Power Semiconductor

NCEP3085EG N-Channel Power MOSFET

The NCEP3085EG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP3085EG Features

* VDS =30V,ID =85A RDS(ON)=2.7mΩ (typical) @ VGS=10V RDS(ON)=3.5mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested

* ESD protection : HBM Class 2 A

NCEP3085EG-NCEPowerSemiconductor.pdf

NCEP3085EG Datasheet Preview — Preview of NCEP3085EG PDF

Datasheet Details

Part number:

NCEP3085EG

Manufacturer:

NCE Power Semiconductor

File Size:

368.29 KB

Description:

N-channel power mosfet.

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NCEP3085EG NCEP3085EG N-Channel Power MOSFET NCE Power Semiconductor

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