NCEP3065QU Datasheet - NCE Power Semiconductor

NCEP3065QU N-Channel Super Trench I Power MOSFET

The NCEP3065QU uses Super Trench I technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchi.

NCEP3065QU Features

* VDS =30V,ID =65A RDS(ON)=1.9mΩ (typical) @ VGS=10V RDS(ON)=3.0mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! DFN 3.3X3.3 Top View

NCEP3065QU-NCEPowerSemiconductor.pdf