NCEP3065QU - N-Channel Super Trench I Power MOSFET

NCE Power Semiconductor

NCEP3065QU Datasheet Preview — Preview of NCEP3065QU PDF

Datasheet Details

Part number	NCEP3065QU
Manufacturer	NCE Power Semiconductor
File Size	847.92 KB
Description	N-Channel Super Trench I Power MOSFET
Datasheet	NCEP3065QU-NCEPowerSemiconductor.pdf

NCEP3065QU Product details

Description

The NCEP3065QU uses Super Trench I technology that is uniquely optimized to provide the most efficient high frequency switching performance. DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =30V,ID =65A RDS(ON)=1.9mΩ (typical) @ VGS=10V RDS(ON)=3.0mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! DFN 3.3X3.3 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP3065QU NCEP3065QU DFN3.3X3.3-8L Reel Size Ø180mm Tape width - Quantity 5000.

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Published: Jan 22, 2025 |