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NCEP40P60Q - P-Channel Super Trench Power MOSFET

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NCE Power Semiconductor

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NCEP40P60Q P-Channel Super Trench Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCEP40P60Q

Datasheet Details

Part number	NCEP40P60Q
Manufacturer	NCE Power Semiconductor
File Size	0.99 MB
Description	P-Channel Super Trench Power MOSFET
Datasheet	NCEP40P60Q Datasheet
Additional preview pages of the NCEP40P60Q datasheet.

Product details

Description

The NCEP40P60Q uses Super Trench technology that is General

Features

uniquely optimized to provide the most efficient high frequency.
VDS =-40V,ID =-60A switching performance. Both conduction and switching power RDS(ON)=8.8mΩ (typical) @ VGS=-10V losses are minimized due to an extremely low combination of RDS(ON)=12.5mΩ (typical) @ VGS=-4.5V RDS(ON) and Qg. This device is ideal for high-frequency switching.
Excellent gate charge x RDS(on) product(FOM) and synchronous rectification.
Very low on-resistance RDS(on).

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Published: Jan 22, 2025 |