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NCEP40P60Q
NCE P-Channel Super Trench Power MOSFET
Description
The NCEP40P60Q uses Super Trench technology that is
General Features
uniquely optimized to provide the most efficient high frequency ● VDS =-40V,ID =-60A
switching performance. Both conduction and switching power
RDS(ON)=8.8mΩ (typical) @ VGS=-10V
losses are minimized due to an extremely low combination of
RDS(ON)=12.5mΩ (typical) @ VGS=-4.5V
RDS(ON) and Qg. This device is ideal for high-frequency switching ● Excellent gate charge x RDS(on) product(FOM)
and synchronous rectification
● Very low on-resistance RDS(on)
Application
● DC/DC Converter ● Ideal for high-frequency
rectification
switching
and
synchronous
● 150 °C operating temperature ● Pb-free lead plating
ly 100% UIS TESTED! On100% ΔVds TESTED!
DFN 3.
NCEP40P60Q Datasheet
