Datasheet Summary
NCE P-Channel Super Trench Power MOSFET
Description
The NCEP40P60Q uses Super Trench technology that is
General Features uniquely optimized to provide the most efficient high frequency
- VDS =-40V,ID =-60A switching performance. Both conduction and switching power
RDS(ON)=8.8mΩ (typical) @ VGS=-10V losses are minimized due to an extremely low bination of
RDS(ON)=12.5mΩ (typical) @ VGS=-4.5V
RDS(ON) and Qg. This device is ideal for high-frequency switching
- Excellent gate charge x RDS(on) product(FOM) and synchronous rectification
- Very low on-resistance RDS(on)
Application
- DC/DC Converter
- Ideal for high-frequency rectification switching and synchronous
-...