2SJ648 Datasheet | NEC

DATA SHEET MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ648 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ648 Features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 1.6 ± 0.1 0.8 ± 0.1 PACKAGE DRAWING (Unit: mm) 0.3 +0.1 - 0 0.15 +0.1 - 0.05 3 0 to 0.1 2 0.2 0.5 +0.1 - 0 Features - 2.5 V drive available - Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = - 4.5 V, ID = - 0.2 A) RDS(on)2 = 1.55 Ω MAX. (VGS = - 4.0 V, ID = - 0.2 A) RDS(on)3 = 2.98 Ω MAX. (VGS = - 2.5 V, ID = - 0.15...