2SJ649 Datasheet, Transistor, NEC

2SJ649 Features

• Transistor
• Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS =
    –10 V, ID =
    –10 A) RDS(on)2 = 75 mΩ MAX. (VGS =
    –4.0 V, ID =
   &n

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Part number:

2SJ649

Manufacturer:

NEC

File Size:

104.53kb

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📄 Datasheet

Description:

Mos field effect transistor. The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2

TAGS

2SJ649

NEC

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