2SJ649 Datasheet - NEC

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2SJ649 MOS FIELD EFFECT TRANSISTOR

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ649 SWITCHING P-CHANNEL POWER MOS FET .
The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

2SJ649_NEC.pdf

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Datasheet Details

Part number:

2SJ649

Manufacturer:

NEC

File Size:

104.53 KB

Description:

MOS FIELD EFFECT TRANSISTOR

Features

* Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS =
* 10 V, ID =
* 10 A) RDS(on)2 = 75 mΩ MAX. (VGS =
* 4.0 V, ID =
* 10 A)
* Low input capacitance: Ciss = 1900 pF TYP. (VDS =
* 10 V, VGS = 0 V)
* Built-in gate protection diode (Isolated

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2SJ649 MOS FIELD EFFECT TRANSISTOR NEC

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