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NE325S01-T1B - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Download the NE325S01-T1B datasheet PDF. This datasheet also covers the NE4-35S variant, as both devices belong to the same c to ku band super low noise amplifier n-channel hj-fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons.

Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications.

Key Features

  • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF (dB) NE325S01 NOISE FIGURE &.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NE4-35S-01.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NE325S01-T1B
Manufacturer NEC
File Size 77.74 KB
Description C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Datasheet download datasheet NE325S01-T1B Datasheet

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Other Datasheets by NEC

Part Number Description
NE325S01-T1 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE32500 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
NE32584 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF (dB) NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA • GATE LENGTH: ≤ 0.20 µm • GATE WIDTH: 200 µm • LOW COST PLASTIC PACKAGE Ga 16 1.0 12 0.5 8 DESCRIPTION 0 NF 1 2 4 6 8 10 14 20 4 30 The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance.