NE85001 Datasheet - NEC

1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

NE85001 Features

* Class A operation

* High power output

* High reliability PHYSICAL DIMENSIONS NE8500100 (CHIP) (unit: µm) 65 170 146 SELECTION CHART 100 PERFORMANCE SPECIFIED PART NUMBER FORM Pout (

* ) (dBm) GL (

* ) (dB) USABLE FREQUENCY (GHz) 2.0 to 10 100 100 780 640

NE85001 General Description

The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, .

NE85001 Datasheet (41.14 KB)

NE85001 Datasheet Preview — Preview of NE85001 PDF

Datasheet Details

Part number:

NE85001

Manufacturer:

NEC

File Size:

41.14 KB

Description:

1 w c-band power gaas fet n-channel gaas mes fet.

📁 Related Datasheet

NE8500100 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET (NEC)

NE8500199 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET (NEC)

NE85002 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET (NEC)

NE8500200 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET (NEC)

NE8500295-4 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET (NEC)

NE8500295-6 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET (NEC)

NE8500295-8 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET (NEC)

NE850R599A C-BAND MEDIUM POWER GaAs MESFET (NEC)

NE851M03 NPN SILICON TRANSISTOR (CEL)

NE851M13 NPN SILICON TRANSISTOR (CEL)

TAGS

NE85001 C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET NEC

Image Gallery

NE85001 Features

NE85001 General Description

Datasheet Details

File Size:

Description:

NE85001 Distributor