NE8500295-8 fet equivalent, 2 w c-band power gaas fet n-channel gaas mes fet.
* Class A operation
* High power output
* High reliability
110 100
100
240
PHYSICAL DIMENSIONS NE8500200 (CHIP) (unit: µm)
640 100 90 1800 100
SELECTION .
9 0.846 0.843 0.834 0.814 0.773 0.740 0.730 0.747 0.741 0.718 0.712 S22 ANG
–155.9
–172..
The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in.
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