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NE850R599A Datasheet - NEC

C-BAND MEDIUM POWER GaAs MESFET

NE850R599A Features

* HIGH OUTPUT POWER: 0.5 W

* HIGH LINEAR GAIN: 9.5 dB

* HIGH EFFICIENCY (PAE): 38%

* SUPERIOR INTERMODULATION DISTORTION

* INDUSTRY STANDARD PACKAGING OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 99 5.2±0.3 1.0±0.1 4.0 MIN BOTH LEADS Gate φ2.2±0.2 4.0±0.1

NE850R599A General Description

The NE850R599A is a medium power GaAs MESFET designed for up to a 1/2W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. Equivalent performance in a chip package can be obtained by using only 1 cell of the NE.

NE850R599A Datasheet (19.07 KB)

Preview of NE850R599A PDF

Datasheet Details

Part number:

NE850R599A

Manufacturer:

NEC

File Size:

19.07 KB

Description:

C-band medium power gaas mesfet.

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TAGS

NE850R599A C-BAND MEDIUM POWER GaAs MESFET NEC

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