NE8500199 fet equivalent, 1 w c-band power gaas fet n-channel gaas mes fet.
* Class A operation
* High power output
* High reliability
PHYSICAL DIMENSIONS NE8500100 (CHIP) (unit: µm)
65 170
146
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100 PERFORMANCE SPECI.
and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package. The device incorporates Ti-Al gate and si.
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package. The device incorporates Ti-Al gate and silicon dioxid.
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