φ 7 ±0.3
* High Linear Power and Gain
* Low Internal Modulation Distortion
* High Reliability Gold Metallization
* 24 V Operation 1.6 ±0.3 2 2 ±0.2

NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applicatio.

AND APPLICATIONS NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. OUTL.

NEL2004F02-24

NEL2012F03-24

NEL2035F03-24

NE-720

NE-72084

NE-808X

NE021

NE02100

NE02103

NE02107

NE02112

NE02132

NE02133