* High Linear Power and Gain 4.2 ±0.4 0.1 +0.05
  –0.02 1 1 3 3.6 ±0.5 3.6 ±0.5 12.4 ±0.2 9.2 ±0.2 4.6 ±0.2
* Low Internal Modulation Distortion <.

NEL2004F02-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applicatio.

AND APPLICATIONS NEL2004F02-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. OUTL.

NEL200101-24

NEL2012F03-24

NEL2035F03-24

NE-720

NE-72084

NE-808X

NE021

NE02100

NE02103

NE02107

NE02112

NE02132

NE02133