NEL2035F03-24 amplifier equivalent, npn silicon epitaxial transistor l band power amplifier.
* High Linear Power and Gain
* Low Internal Modulation Distortion
* High Reliability Gold Metallization
* Emitter Ballasting
* 24 V Operation
3
2.17.
NEL2035F03-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applicatio.
AND APPLICATIONS
NEL2035F03-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.
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