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UPA675T Datasheet N-Channel MOS Field Effect Transistor

Manufacturer: NEC (now Renesas Electronics)

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General Description

The µ PA675T is an N-channel vertical MOS FET.

Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.

PACKAGE DRAWING (Unit: mm) 0.2 -0 +0.1 0.15 -0.05 +0.1 1.25 ±0.1 2.1 ±0.1 6 5 4 0 to 0.1

Overview

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA675T N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED.

Key Features

  • Two MOS FET circuits in package the same size as SC-70 Automatic mounting supported Gate can be driven by a 1.5 V power source Because of its high input impedance, there’s no need to consider a drive current.
  • Since bias resistance can be omitted, the number of components required can be reduced 1 2 3 0.7 0.9 ±0.1 0.65 0.65 1.3 2.0 ±0.2 PIN.

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