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  NEC Electronic Components Datasheet  

UPG2012TB Datasheet

L-BAND SPDT SWITCH

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DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2012TB
L-BAND SPDT SWITCH
DESCRIPTION
The µPG2012TB is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for
mobile phone and another L-band application.
This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin super minimold package. And this package is able to high-density surface
mounting.
FEATURES
• Supply voltage
: VDD = 2.7 to 3.0 V (2.8 V TYP.)
• Switch control voltage
: Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.)
: Vcont (L) = 0.2 to +0.2 V (0 V TYP.)
• Low insertion loss
: LINS1 = 0.27 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: LINS2 = 0.30 dB TYP. @ f = 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: LINS3 = 0.30 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference
value)
• High isolation
: ISL1 = 28 dB TYP. @ f = 0.5 to 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: ISL2 = 25 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference
value)
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATIONS
L-band digital cellular or cordless telephone
PCS, W-LAN, WLL and BluetoothTM etc.
ORDERING INFORMATION
Part Number
µPG2012TB-E3
Package
6-pin super minimold
Marking
G3A
Supplying Form
Embossed tape 8 mm wide
Pin 1, 2, 3 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2012TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10218EJ01V0DS (1st edition)
Date Published December 2002 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2002


  NEC Electronic Components Datasheet  

UPG2012TB Datasheet

L-BAND SPDT SWITCH

No Preview Available !

µPG2012TB
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
(Top View)
(Bottom View)
Pin No.
1
3
43
44
3
2
2
52
55
3
2
4
1
61
66
1
5
6
Pin Name
OUTPUT1
GND
OUTPUT2
Vcont
INPUT
VDD
TRUTH TABLE
Vcont
Low
High
INPUTOUTPUT1
OFF
ON
INPUTOUTPUT2
ON
OFF
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Supply Voltage
Switch Control Voltage
Input Power
Power Dissipation
Operating Ambient Temperature
Storage Temperature
Symbol
VDD
Vcont
Pin
PD
TA
Tstg
Ratings
+6.0
+6.0
+26
150 Note
45 to +85
55 to +150
Unit
V
V
dBm
mW
°C
°C
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Supply Voltage
Switch Control Voltage (H)
Switch Control Voltage (L)
Symbol MIN. TYP. MAX. Unit
VDD
2.7
2.8
3.0
V
Vcont(H)
2.7
2.8
3.0
V
Vcont(L)
0.2
0
0.2
V
2
Data Sheet PG10218EJ01V0DS



Part Number UPG2012TB
Description L-BAND SPDT SWITCH
Maker NEC
Total Page 3 Pages
PDF Download

UPG2012TB Datasheet PDF





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