GaAs INTEGRATED CIRCUIT
L-BAND SPDT SWITCH
The µPG2012TB is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for
mobile phone and another L-band application.
This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin super minimold package. And this package is able to high-density surface
• Supply voltage
: VDD = 2.7 to 3.0 V (2.8 V TYP.)
• Switch control voltage
: Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.)
: Vcont (L) = −0.2 to +0.2 V (0 V TYP.)
• Low insertion loss
: LINS1 = 0.27 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: LINS2 = 0.30 dB TYP. @ f = 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: LINS3 = 0.30 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference
• High isolation
: ISL1 = 28 dB TYP. @ f = 0.5 to 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V
: ISL2 = 25 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
• L-band digital cellular or cordless telephone
• PCS, W-LAN, WLL and BluetoothTM etc.
6-pin super minimold
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2012TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10218EJ01V0DS (1st edition)
Date Published December 2002 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2002