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UPG2012TB Datasheet L-band Spdt Switch

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH.

General Description

The µPG2012TB is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L-band application.

This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.

This device is housed in a 6-pin super minimold package.

Key Features

  • Supply voltage : VDD = 2.7 to 3.0 V (2.8 V TYP. ).
  • Switch control voltage : Vcont (H) = 2.7 to 3.0 V (2.8 V TYP. ) : Vcont (L) =.
  • 0.2 to +0.2 V (0 V TYP. ).
  • Low insertion loss : LINS1 = 0.27 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V : LINS2 = 0.30 dB TYP. @ f = 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V : LINS3 = 0.30 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference value).
  • High isolation : ISL1 = 28 dB TYP. @.

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Similar Datasheet

Brand Logo Part Number Description Manufacturer
CEL Logo UPG2012TB L-BAND SPDT SWITCH CEL

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