dual n-channel enhancement mode field effect transistor.
* Pb−Free, Halogen Free and RoHS compliant.
* Low RDS(on) to Minimize Conduction Losses.
* Ohmic Region Good RDS(on) Ratio.
* Optimized Gate Charge to Min.
* Protection Circuits Applications.
* Protable Devices for Battery PACK Applications.
D1 D1 D2 D2 #1 S1 G1 S2 G.
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