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NTE

2N7000 Datasheet Preview

2N7000 Datasheet

N-Channel MOSFET

No Preview Available !

2N7000
NCh, Enhancement Mode
Field Effect Transistor
TO92 Type Package
D
Features:
D High Density Cell Design for Low RDS(ON)
D Voltage Controlled Small Signal Switch
D Rugged and Reliable
D High Saturation Current Capability
G
S
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
DrainGate Voltage (RGS 1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
GateSource Voltage,
Continuous . . .
.V.G. S.
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20V
NonRepetitive (tp 50s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Maximum Drain Current,
Continuous . . . . .
.ID. .
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200mA
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Maximum Power Dissipation,
Derate above 25C . .
.P.D.
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. . 400mW
3.2mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Thermal Resistance, JunctiontoAmbient, Rth(JA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312.5C/W
Maximum Lead Temperature for Soldering Purposes, 1/16” from Case, 10sec), TL . . . . . . . +300C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
DrainSource Breakdown Voltage
ZeroGateVoltage Drain Current
GateBody Leakage Current, Forward
GateBody Leakage Current, Reverse
BVDss
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 10A
VVDGSS
=
=
48V,
0
TJ = +125C
VGSF = 15V, VDS = 0
VGSF = 15V, VDS = 0
Min Typ Max Unit
60
V
− − 1.0 A
− − 1.0 mA
− − 10
nA
− − −10 nA




NTE

2N7000 Datasheet Preview

2N7000 Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
ON Characteristics (Note 1)
Gate Threshold Voltage
Static DrainSource ON Resistance
DrainSource ONVoltage
ONState Drain Current
Forward Transconductance
Dynamic Characteristics
VGS(th)
rDS(on)
VDS(on)
ID(on)
gFS
ID = 1mA, VDS = VGS
VIDG=S
= 10V,
500mA
TJ = +125C
VGS = 4.5V, ID = 75mA
VGS = 10V, ID = 500mA
VGS = 4.5V, ID = 75mA
VGS = 4.5V, VDS = 10V
VDS = 10V, ID = 200mA
0.8 2.1
1.2
1.9
1.8
0.6
0.14
75 600
100 320
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TurnOn Time
TurnOff Time
Ciss
Coss
Crss
ton
toff
VDS = 25V, VGS = 0V, f = 1MHz
RVIDDG=DEN5=0=1052mV5A,,RVLG=S2=510, V,
20
11
4
−−
−−
3.0
5.0
9.0
5.3
2.5
0.4
50
25
5
10
10
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
V
V
V
mA
mS
pF
pF
pF
ns
ns
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445)
Dia Max
SGD
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165
(4.2)
Max
.105 (2.67) Max


Part Number 2N7000
Description N-Channel MOSFET
Maker NTE
Total Page 2 Pages
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