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NTE476 Silicon NPN Transistor RF Power Output
Description: The NTE476 is a silicon epitaxial NPN–planar transistor which employs a multi–emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters result in high RF current handling capability, high power gain, low base resistance and low output capacitance. This device is intended for use as a Class A, B or C amplifier and in oscillator and frequency multiplier circuits. Features: D Designed for VHF mobile and marine transmitters D High efficiency at maximum stability D Improved metallization to achieve extreme ruggedness Absolute Maximum Ratings: (TA = +25°C except where specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE476 Datasheet
