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BC516 Datasheet

PNP Darlington transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC516
PNP Darlington transistor
Product specification
Supersedes data of 1997 Apr 16
1999 Apr 23


NXP Semiconductors Electronic Components Datasheet

BC516 Datasheet

PNP Darlington transistor

No Preview Available !

Philips Semiconductors
PNP Darlington transistor
Product specification
BC516
FEATURES
High current (max. 500 mA)
Low voltage (max. 30 V)
Very high DC current gain (min. 30000).
APPLICATIONS
Where very high amplification is required.
DESCRIPTION
PNP Darlington transistor in a TO-92; SOT54 plastic
package. NPN complement: BC517.
PINNING
PIN
1
2
3
emitter
base
collector
DESCRIPTION
handbook, halfpage
1
2
3
23
TR1
TR2
1
MAM303
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
PARAMETER
CONDITIONS
collector-base voltage (open emitter) open emitter
collector-emitter voltage
emitter-base voltage
VBE = 0
open collector
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
Tamb 25 °C; note 1
junction temperature
operating ambient temperature
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
40
30
10
500
800
100
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 23
2


Part Number BC516
Description PNP Darlington transistor
Maker NXP
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BC516 Datasheet PDF






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