Datasheet4U Logo Datasheet4U.com

BF1206F - Dual N-channel dual gate MOSFET

Description

The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads.

The source and substrate are interconnected.

Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC).

Features

  • Two low noise gain controlled amplifiers in a single package.
  • Superior cross-modulation performance during AGC.
  • High forward transfer admittance.
  • High forward transfer admittance to input capacitance ratio.
  • Suited for 3 volt.

📥 Download Datasheet

📁 Similar Datasheet

  • BF1207 - Dual N-channel dual gate MOSFET (NXP Semiconductors)
  • BF1211 - N-channel dual-gate MOS-FETs (Philips)
  • BF1211R - N-channel dual-gate MOS-FETs (Philips)
  • BF1211WR - N-channel dual-gate MOS-FETs (Philips)
  • BF1214 - Dual N-channel dual gate MOSFET (NXP Semiconductors)
  • BF122M - SMD Gas Discharge Tube (LangTuo)
  • BF128128A - FSTN Transflective LCD (Bolymin)
  • BF128128E - LCD (Bolymin)
  • BF1005 - Silicon N-Channel MOSFET Tetrode (Siemens Semiconductor Group)
  • BF1005 - Silicon N-Channel MOSFET Tetrode (Infineon Technologies AG)
Other Datasheets by NXP
  • BF1206 - Dual N-channel dual-gate MOS-FET
  • BF1201 - N-channel dual-gate PoLo MOS-FETs
  • BF1201R - N-channel dual-gate PoLo MOS-FETs
  • BF1201WR - N-channel dual-gate PoLo MOS-FETs
  • BF1202 - N-channel dual-gate PoLo MOS-FETs
  • BF1202R - N-channel dual-gate PoLo MOS-FETs
  • BF1202WR - N-channel dual-gate PoLo MOS-FETs
  • BF1203 - Dual N-channel dual gate MOS-FET

Full PDF Text Transcription

Click to expand full text
SOT666 BF1206F Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile CAUTION 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic package. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
Published: |