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NXP Semiconductors Electronic Components Datasheet

BFG197 Datasheet

NPN 7 GHz wideband transistor

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BFG197 pdf
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG197; BFG197/X; BFG197/XR
NPN 7 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under discrete semiconductors, SC14
1995 Sep 13


NXP Semiconductors Electronic Components Datasheet

BFG197 Datasheet

NPN 7 GHz wideband transistor

No Preview Available !

BFG197 pdf
Philips Semiconductors
NPN 7 GHz wideband transistor
FEATURES
High power gain
Low noise figure
Gold metallization ensures
excellent reliability.
DESCRIPTION
The BFG197 is a silicon NPN
transistor in a 4-pin, dual-emitter
plastic SOT143 envelope. It is
primarily intended for wideband
applications in the GHz range, such
as satellite TV systems and repeater
amplifiers in fibre-optic systems.
PINNING
PIN DESCRIPTION
BFG197 (Fig.1) Code: V5
1 collector
2 base
3 emitter
4 emitter
BFG197/X (Fig.1) Code: V13
1 collector
2 emitter
3 base
4 emitter
BFG197A/XR (Fig.2) Code: V35
1 collector
2 emitter
3 base
4 emitter
Product specification
BFG197; BFG197/X;
BFG197/XR
handbook, 2 c4olumns
3
1
Top view
2
MSB014
Fig.1 SOT143.
handbook, 2 co3lumns
4
2
Top view
1
MSB035
Fig.2 SOT143XR.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
IC
Ptot
Cre
fT
GUM
F
collector-base voltage
collector-emitter voltage
collector current
total power dissipation
feedback capacitance
transition frequency
maximum unilateral
power gain
noise figure
open emitter
open base
DC value
up to Ts = 75 °C; note 1
IC = ic = 0; VCB = 8 V; f = 1 MHz
IC = 50 mA; VCE = 4 V; f = 2 GHz
IC = 50 mA; VCE = 6 V;
Tamb = 25 °C; f = 1 GHz
IC = 50 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
Γs = Γopt; IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
Note
1. TS is the temperature at the soldering point of the collector tab.
MIN.
TYP.
0.85
7.5
16
MAX.
20
10
100
350
UNIT
V
V
mA
mW
pF
GHz
dB
10 dB
1.7 dB
1995 Sep 13
2


Part Number BFG197
Description NPN 7 GHz wideband transistor
Maker NXP
Total Page 13 Pages
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