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Infineon Technologies Electronic Components Datasheet

BFG193 Datasheet

NPN Silicon RF Transistor

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BFG193 pdf
NPN Silicon RF Transistor
 For low noise, high-gain amplifiers up to 2 GHz
 For linear broadband amplifiers
 fT = 8 GHz
F = 1.3 dB at 900 MHz
BFG193
4
3
2
1 VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFG193
Marking
BFG193
Pin Configuration
Package
1 = E 2 = B 3 = E 4 = C SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS  87 °C 1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 2)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
12
20
20
2
80
10
600
150
-65 ... 150
-65 ... 150
 105
Unit
V
mA
mW
°C
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1 Jun-27-2001


Infineon Technologies Electronic Components Datasheet

BFG193 Datasheet

NPN Silicon RF Transistor

No Preview Available !

BFG193 pdf
BFG193
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 30 mA, VCE = 8 V
V(BR)CEO 12
-
-V
ICES
- - 100 µA
ICBO
- - 100 nA
IEBO
- - 1 µA
hFE 50 100 200 -
2 Jun-27-2001


Part Number BFG193
Description NPN Silicon RF Transistor
Maker Infineon Technologies AG
Total Page 6 Pages
PDF Download
BFG193 pdf
BFG193 Datasheet PDF
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