BFR520 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BFR520 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor Features - High power gain - Low noise figure - High transition frequency - Gold metallization ensures excellent reliability. DESCRIPTION PIN The BFR520 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless 1 2 3 base emitter collector DESCRIPTION Code: N28 telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. The transistor is encapsulated in a plastic SOT23 envelope. PINNING 1 Top view fpage MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot h FE Cre f T GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 97 °C; note 1 IC = 20 m A; VCE = 6 V IC = ic = 0; VCB = 6 V; f = 1 MHz IC = 20 m A; VCE = 6 V; f = 1 GHz IC = 20 m A; VCE = 6 V; Tamb = 25 °C; f = 900 MHz IC = 20 m A; VCE = 6 V; Tamb = 25 °C; f = 2 GHz S212 F insertion power gain noise figure IC = 20 m A; VCE = 6 V; Tamb = 25 °C; f = 900 MHz Γs = Γopt; IC = 5 m A; VCE = 6 V; Tamb = 25 °C; f = 900 MHz Γs = Γopt; IC = 20 m A; VCE = 6 V; Tamb = 25 °C; f = 900 MHz Γs = Γopt; IC = 5 m A; VCE = 8 V; Tamb = 25 °C; f = 2 GHz Note 1. Ts is the temperature at the soldering point of the collector tab. RBE = 0 CONDITIONS MIN. - - - - 60 - - - - 13 - - - TYP. - - - - 120 0.4 9 15 9 14 1.1 1.6 1.9 MAX. 20 15 70 300 250 - - - - - 1.6 2.1 - p F GHz d B d B d B d B d B d B UNIT V V m A m W September 1995 Philips...