900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

BFR520 Datasheet

NPN 9 GHz wideband transistor

No Preview Available !

DISCRETE SEMICONDUCTORS
DATA SHEET
BFR520
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995


NXP Semiconductors Electronic Components Datasheet

BFR520 Datasheet

NPN 9 GHz wideband transistor

No Preview Available !

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR520
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
DESCRIPTION
The BFR520 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, pagers and satellite
TV tuners (SATV) and repeater
amplifiers in fibre-optic systems.
The transistor is encapsulated in a
plastic SOT23 envelope.
PINNING
PIN DESCRIPTION
Code: N28
1 base
2 emitter
3 collector
fpage
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCES
IC
Ptot
hFE
Cre
fT
GUM
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
S212
F
insertion power gain
noise figure
RBE = 0
up to Ts = 97 °C; note 1
IC = 20 mA; VCE = 6 V
IC = ic = 0; VCB = 6 V; f = 1 MHz
IC = 20 mA; VCE = 6 V; f = 1 GHz
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
Γs = Γopt; IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
Γs = Γopt; IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN. TYP. MAX. UNIT
− − 20 V
− − 15 V
− − 70 mA
− − 300 mW
60 120 250
0.4 pF
9 GHz
15 dB
9 dB
13 14
dB
1.1 1.6 dB
1.6 2.1 dB
1.9 dB
September 1995
2


Part Number BFR520
Description NPN 9 GHz wideband transistor
Maker NXP
PDF Download

BFR520 Datasheet PDF






Similar Datasheet

1 BFR520 NPN 9 GHz wideband transistor
NXP
2 BFR520 NPN Transistor
INCHANGE
3 BFR520T NPN 9 GHz wideband transistor
NXP





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy