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BLF369 Datasheet

VHF power LDMOS transistor

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BLF369
VHF power LDMOS transistor
Rev. 01 — 13 April 2006
Objective data sheet
1. Product profile
1.1 General description
A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial
applications in the HF/VHF band.
Table 1: Typical performance
Typical RF performance at VDS = 32 V and Th = 25 °C in a common-source 225 MHz test circuit.[1]
Mode of operation f
PL PL(PEP) Gp ηD IMD3
(MHz)
(W) (W)
(dB) (%)
(dBc)
CW, class AB
225
500 -
18 60 -
2-tone, class AB
f1 = 225; f2 = 225.1 -
500
19 47 28
[1] Th is the heatsink temperature.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 1.0 A:
N Load power PL = 500 W
N Gain Gp 18 dB
N Drain efficiency ηD = 60 %
I Advanced flange material for optimum thermal behavior and reliability
I Excellent ruggedness
I High power gain
I Designed for broadband operation (HF/VHF band)
I Source on underside eliminates DC isolators, reducing common-mode inductance
I Easy power control
1.3 Applications
I Communication transmitter applications in the UHF band
I Industrial applications in the UHF band


NXP Semiconductors Electronic Components Datasheet

BLF369 Datasheet

VHF power LDMOS transistor

No Preview Available !

www.DataSheet4U.com
Philips Semiconductors
BLF369
VHF power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
gate1
gate2
drain1
drain2
source
[1] Connected to flange.
3. Ordering information
Simplified outline
Symbol
12
1
53
5
[1] 3 4
4
2
sym117
Table 3: Ordering information
Type number Package
Name Description
Version
BLF369
- flanged LDMOST ceramic package; 2 mounting holes; 4 SOT800-2
leads
4. Limiting values
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS drain-source voltage
VGS gate-source voltage
Tstg storage temperature
Tj junction temperature
-
-
65
-
Max
65
±13
+150
200
Unit
V
V
°C
°C
5. Thermal characteristics
Table 5:
Symbol
Rth(j-c)
Rth(j-h)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to case Tj = 200 °C
thermal resistance from junction to heatsink Tj = 200 °C
Typ
[1][2] 0.26
[1][2][3] 0.35
[1] Tj is the junction temperature.
[2] Rth(j-c) and Rth(j-h) are measured under RF conditions
[3] Rth(j-h) is dependent on the applied thermal compound and clamping/mounting of the device.
Unit
K/W
K/W
BLF369_1
Objective data sheet
Rev. 01 — 13 April 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
2 of 14


Part Number BLF369
Description VHF power LDMOS transistor
Maker NXP
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BLF369 Datasheet PDF






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