Description
A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band.
Features
- I Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A: N Load power PL = 500 W N Gain Gp ≥ 18 dB N Drain efficiency ηD = 60 % I Advanced flange material for optimum thermal behavior and reliability I Excellent ruggedness I High power gain I Designed for broadband operation (HF/VHF band) I Source on underside eliminates DC isolators, reducing common-mode inductance I Easy power control
1.3.
BLF369 Datasheet
