BLF369
BLF369 is VHF power LDMOS transistor manufactured by NXP Semiconductors.
description
A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band.
Table 1: Typical performance Typical RF performance at VDS = 32 V and Th = 25 °C in a mon-source 225 MHz test circuit.[1] Mode of operation CW, class AB 2-tone, class AB
[1] f (MHz) 225 f1 = 225; f2 = 225.1
PL (W) 500
- PL(PEP) (W) 500
Gp (d B) 18 19
ηD (%) 60 47
IMD3 (d Bc)
- 28
Th is the heatsink temperature.
CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A: N Load power PL = 500 W N Gain Gp ≥ 18 d B N Drain efficiency ηD = 60 % I Advanced flange material for optimum thermal behavior and reliability I Excellent ruggedness I High power gain I Designed for broadband operation (HF/VHF band) I Source on underside eliminates DC isolators, reducing mon-mode inductance I Easy power control
1.3 Applications
I munication transmitter applications in the UHF band I Industrial applications in the UHF band
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Philips Semiconductors
VHF power LDMOS transistor
2. Pinning information
Table 2. Pin 1 2 3 4 5 Pinning Description gate1 gate2 drain1 drain2 source
[1]
Simplified outline
1 2
Symbol
3 5 4
2 sym117
[1]
Connected to flange.
3. Ordering information
Table 3: Ordering information Package Name BLF369 Description
Version flanged LDMOST ceramic package; 2 mounting holes; 4 SOT800-2 leads Type number
4. Limiting values
Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tj Parameter drain-source voltage gate-source voltage storage temperature junction temperature Conditions Min
- 65 Max 65 ±13 +150 200 Unit V V °C °C
5. Thermal characteristics...
