VHF power LDMOS transistor
Rev. 01 — 13 April 2006
Objective data sheet
1. Product proﬁle
1.1 General description
A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial
applications in the HF/VHF band.
Table 1: Typical performance
Typical RF performance at VDS = 32 V and Th = 25 °C in a common-source 225 MHz test circuit.
Mode of operation f
PL PL(PEP) Gp ηD IMD3
CW, class AB
18 60 -
2-tone, class AB
f1 = 225; f2 = 225.1 -
19 47 −28
 Th is the heatsink temperature.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
I Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 1.0 A:
N Load power PL = 500 W
N Gain Gp ≥ 18 dB
N Drain efﬁciency ηD = 60 %
I Advanced ﬂange material for optimum thermal behavior and reliability
I Excellent ruggedness
I High power gain
I Designed for broadband operation (HF/VHF band)
I Source on underside eliminates DC isolators, reducing common-mode inductance
I Easy power control
I Communication transmitter applications in the UHF band
I Industrial applications in the UHF band