BLF369 Datasheet - NXP

VHF power LDMOS transistor

BLF369 Features

* I Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A: N Load power PL = 500 W N Gain Gp ≥ 18 dB N Drain efﬁciency ηD = 60 % I Advanced ﬂange material for optimum thermal behavior and reliability I Excellent ruggedness I High power gain

BLF369 General Description

A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band. Table 1: Typical performance Typical RF performance at VDS = 32 V and Th = 25 °C in a common-source 225 MHz test circuit.[1] Mode of operation CW, class AB 2-tone, class AB [1] f.

BLF369 Datasheet (172.52 KB)