Part number:
BLF369
Manufacturer:
File Size:
172.52 KB
Description:
Vhf power ldmos transistor.
* I Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A: N Load power PL = 500 W N Gain Gp ≥ 18 dB N Drain efficiency ηD = 60 % I Advanced flange material for optimum thermal behavior and reliability I Excellent ruggedness I High power gain
BLF369
172.52 KB
Vhf power ldmos transistor.
📁 Related Datasheet
BLF368 - VHF push-pull power MOS transistor
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D091
BLF368 VHF push-pull power MOS transistor
Product specification Supersedes data of September 1992 1998 Jul.
BLF346 - VHF power MOS transistor
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF346 VHF power MOS transistor
Product specification Supersedes data of September 1992 1996 Oct 02
Philips Semic.
BLF348 - VHF linear push-pull power MOS transistor
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF348 VHF linear push-pull power MOS transistor
Product specification October 1992
Philips Semiconductors
Produ.
BLF378 - VHF push-pull power MOS transistor
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D091
BLF378 VHF push-pull power MOS transistor
Product specification Supersedes data of 1996 Oct 17 1998 Jul 29.
BLF0810-180 - Base station LDMOS transistors
(NXP)
..
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF0810-180; BLF0810S-180 Base station LDMOS transistors
Product specificatio.
BLF0810-90 - Base station LDMOS transistors
(NXP)
..
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF0810-90; BLF0810S-90 Base station LDMOS transistors
Product specification .
BLF0810S-180 - Base station LDMOS transistors
(NXP)
..
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF0810-180; BLF0810S-180 Base station LDMOS transistors
Product specificatio.
BLF0810S-90 - Base station LDMOS transistors
(NXP)
..
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF0810-90; BLF0810S-90 Base station LDMOS transistors
Product specification .